Samsung Claims Higher 3 nm Yields than TSMC

Competition between Samsung and TSMC in the 4 nm and 3 nm foundry process markets is about to heat up, with the Korean foundry claiming yields competitive to those of TSMC, according to a report in the Kukmin Ilbo, a Korean daily newspaper. 4 nm is the final silicon fabrication process to use the FinFET technology that powered nodes ranging between 16 nm to 4 nm. Samsung Foundry is claiming 4 nm wafer yields of 75%, against the 80% yields figure put out by TSMC. 4 nm powers several current-generation mobile SoCs, PC processors, and more importantly, the GPUs driving the AI gold-rush.

Things get very interesting with 3 nm, the node that debuts GAA-FET (gates all around FET) technology. Here, Samsung claims to offer higher yields than TSMC, with its 3 nm GAA node clocking 60% yields, against 55% put out by TSMC. Samsung was recently bitten by a scandal where its engineers allegedly falsified yields figures to customers to score orders, which had a cascading effect on the volumes and competitiveness of their customers. We're inclined to think that Samsung has taken lessons and is more careful with the yields figures being reported in the press. Meanwhile, Intel Foundry Services competes with the Intel 3 node, which is physically 7 nm FinFET, but with electrical characteristics comparable to those of 3 nm.